Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
MJE4340
MJE4341
I
C
=100mA ;I
B
=0
MJE4342
MJE4343
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
MJE4340
MJE4341
MJE4342
MJE4343
I
CEX
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=8A ;I
B
=0.8A
I
C
=16A; I
B
=2.0A
I
C
=16A; I
B
=2.0A
I
C
=16A ; V
CE
=4V
V
CE
=50V; I
B
=0
V
CE
=60V; I
B
=0
MJE4340/4341/4342/4343
CONDITIONS
MIN
100
120
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
140
160
2.0
3.5
3.9
3.9
V
V
V
V
I
CEO
Collector
cut-off current
0.75
V
CE
=70V; I
B
=0
V
CE
=80V; I
B
=0
V
CE
=RatedV
CBO
; V
BE
=1.5V
T
C
=150℃
V
CB
=RatedV
CB
; I
E
=0
V
EB
=7V; I
C
=0
I
C
=8A ; V
CE
=2V
I
C
=16A ; V
CE
=4V
I
E
=0 ; V
CB
=10V;f=0.1MHz
I
C
=-1A ; V
CE
=20V;f=0.5MHz
1.0
15
8
800
1.0
5.0
0.75
1.0
mA
mA
mA
mA
pF
MHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
