IXFH 24N80P IXFK 24N80P
IXFT 24N80P
Fig. 7. Input Admittance
40
36
32
65
60
55
50
Fig. 8. Transconductance
g
f s
- Siemens
28
45
40
35
30
25
20
15
10
T
J
= - 40ºC
25ºC
125ºC
I
D
- Amperes
24
20
16
12
8
4
0
3
3.5
4
4.5
5
5.5
6
T
J
= 125ºC
25ºC
- 40ºC
5
0
0
5
10
15
20
25
30
35
40
45
50
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
36
32
28
10
9
8
7
V
DS
= 400V
I
D
= 12A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
24
V
GS
- Volts
T
J
= 25ºC
0.7
0.8
0.9
1
6
5
4
3
2
1
0
20
16
12
8
4
0
0.3
0.4
0.5
0.6
T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
110
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
Ciss
1.00
Fig. 12. Maximum Transient Thermal
Resistance
Capacitance - PicoFarads
R
(th)JC
- ºC / W
30
35
40
1,000
C oss
0.10
100
f = 1 MHz
10
0
5
10
15
20
C rss
25
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
F_24N80P (8J) 6-22-06.xls
IXYS [ IXYS CORPORATION ]
