MDD 312
High Power
Diode Modules
V
RSM
V
DSM
V
1300
1500
1700
1900
2100
2300
Symbol
I
FRMS
I
FAVM
I
FSM
V
RRM
V
DRM
V
1200
1400
1600
1800
2000
2200
Type
3
1
2
I
FRMS
= 2x520 A
I
FAVM
= 2x310 A
V
RRM
= 1200-2200 V
3
2
MDD
MDD
MDD
MDD
MDD
MDD
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
Maximum Ratings
520
310
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
10500
11200
9200
9800
551000
527000
423 000
403 000
-40...+150
150
-40...+125
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
V~
V~
1
Conditions
T
VJ
= T
VJM
T
C
= 100°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
• International standard package
• Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered E 72873
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
M8x20
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Symbol
I
RRM
V
F
V
T0
r
T
R
thJC
R
thJK
Q
S
I
RM
d
S
d
A
a
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 600 A; T
VJ
= 25°C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
T
VJ
= 125°C; I
F
= 400 A; -di/dt = 50 A/µs
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
g
Characteristic Values
30
1.32
0.8
0.6
0.12
0.06
0.16
0.08
700
260
12.7
9.6
50
mA
V
V
mΩ
K/W
K/W
K/W
K/W
µC
A
mm
mm
m/s
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
423
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-3
IXYS [ IXYS CORPORATION ]
