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MDD312-20N1 参数 Datasheet PDF下载

MDD312-20N1图片预览
型号: MDD312-20N1
PDF下载: 下载PDF文件 查看货源
内容描述: 大功率二极管模块 [High Power Diode Modules]
分类和应用: 二极管
文件页数/大小: 3 页 / 80 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号MDD312-20N1的Datasheet PDF文件第1页浏览型号MDD312-20N1的Datasheet PDF文件第2页  
MDD 312
3000
W
2500
P
tot
2000
R
thKA
K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
1500
Circuit
B6U
3 x MDD312
1000
500
0
0
200
400
600
800 A
I
dAVM
0
25
50
75
100
125
T
A
150
Fig. 8 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
0.20
K/W
0.15
Z
thJC
R
thJC
for various conduction angles d:
d
DC
180°C
120°C
60°C
30°C
30°
60°
120°
180°
DC
R
thJC
(K/W)
0.120
0.128
0.135
0.153
0.185
0.10
Constants for Z
thJC
calculation:
i
1
2
3
4
10
1
t
s
10
2
R
thi
(K/W)
0.0058
0.031
0.072
0.0112
t
i
(s)
0.00054
0.098
0.54
12
0.05
0.00
10
-3
10
-2
10
-1
10
0
Fig. 9 Transient thermal impedance junction to case (per diode)
0.25
K/W
0.20
Z
thJK
0.15
R
thJK
for various conduction angles d:
d
DC
180°C
120°C
60°C
30°C
R
thJK
(K/W)
0.160
0.168
0.175
0.193
0.225
Constants for Z
thJK
calculation:
0.10
30°
60°
120°
180°
DC
i
1
2
3
4
5
s
t
10
2
R
thi
(K/W)
0.0058
0.031
0.072
0.0112
0.04
t
i
(s)
0.00054
0.098
0.54
12
12
0.05
0.00
10
-3
10
-2
10
-1
10
0
10
1
Fig. 10Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
423
© 2004 IXYS All rights reserved
3-3