Infrared Emitting Diode(GaAs)
EL333
The EL333 is a Double-end Type IR Emtting Diode
mounted in a compact clear package.
EL333 is compact size and easy to mount
on small space.
±1
±1
Dimensions
[Unit : mm]
Features
·
Compact package with double-end leads
·
Clear plastic package
·
RoHS Compliant
Applications
·
Photointerrupter
·
Optical switches
·
Transmission sensor
2
1
Anode
G.Tolerance : ± 0.2
Cathode
Absolute Maximum Ratings
Parameter
Forward Current
Reverse Voltage
Pulse Forward Current*
1
Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
*2
[Ta = 25°C]
Symbol
I
F
V
R
I
FP
P
D
Topr.
Tstg.
Tsol
Rating
50
5
1
75
-25~ + 85
-30~ + 80
260
Unit
mA
V
A
mW
°C
°C
°C
*1. Pulse width tw=100µsec, cycle T=10msec
*2. Distance from end of the package =2mm, time=5sec, Max.
Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Current
Capacitance
Radiant intensity
Peak Wavelength
Spectral Width at FWHM
Half Angle
[Ta = 25°C]
Symbol
V
F
I
R
C
T
P
O
λp
∆λ
∆Θ
Conditions
I
F
=50mA
V
R
=5V
f=1MHz
I
F
=20mA
I
F
=20mA
I
F
=20mA
Min.
-
-
-
0.8
-
-
-
Typ.
1.2
-
25
-
940
50
± 20
Max.
1.5
10
-
-
-
-
-
Unit.
V
µA
㎊
mV
nm
nm
degrees
-1-
KODENSHI [ KODENSHI KOREA CORP. ]
