Infrared Emitting Diode(GaAs)
EL333
Power dissipation Vs.
Ambient temperature
125
Power dissipation P
D
(mW)
Forward current I
F
(mA)
100
75
50
25
0
50
40
30
20
10
0
0.5 1.0 1.5
2.0
Forward voltage V
F
(V)
Forward current Vs.
Forward voltage
Ta=25℃
Radiant intensity Vs.
Forwardb current
10
2
0
20
40
60
80
100
Radiant intensity
P
10
1
10
0
10
-1
10
0
Ambient temperature T
a
(℃)
10
1
10
2
10
3
Forward current I
F
Realtive radiant intensity
Vs. Ambient temperature
Relative radiant intensity P
o
100
80
60
40
20
Relative intensity Vs.
Wavelength
Ta=25℃
Sensitivity Diagram
Angular Displacement
+20
0
Relative intensity (%)
-20
Ta=25°C
-4
0
0
-6
10
1
0.1
0
+4
+60
50
-80
-100
+80
+100
0
100
50
50
100
-20
0
20
40
60
80
100
0
400 500 600 700 800 900 1000 1100
Wavelength
λ
(nm)
Relative Output (%)
Ambient temperature T
a
(°C)
Relative Radiant intensity Vs.
Distance
Relative radiant intensity P
o
100
Relative radiant intensity Vs.
Distance test method
I
F
= 50㎃
10
ℓ
1
Detector
SP-1ML
1
10
Distance
ℓ
100
(mm)
-2-
KODENSHI [ KODENSHI KOREA CORP. ]
