MA4E2502 Series
SURMOUNT
TM
Low, Medium, and High
Barrier Silicon Schottky Diodes
Applications Section
MA4E2502L-1246
Frequency (GHz) vs. Output Voltage (V)
10
-20 dBm
Output Voltage (V)
1
-10 dBm
0 dBm
+10 dBm
+20 dBm
0.1
M/A-COM Products
Rev. V7
0.01
8
11
14
17
20
23
Frequency (GHz)
MA4E2502L-1246
Input Pow er (dBm ) vs. Output Voltage (V)
10
Output Voltage (V)
1
8 GHz
18 GHz
0.1
23 GHz
0.01
-20
-15
-10
-5
Input Pow er (dBm )
0
5
10
The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a
50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm
connector and the output voltage was measured through a bias tee on a voltmeter.
Matching was not attempted.
3
ADVANCED:
Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
•
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•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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