Monolithic CMOS Analog Multiplexers
DG508A/DG509A
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V-
V+ ....................................................................................+44V
GND ................................................................................ +25V
Digital Inputs, V
S
and V
D
(Note 1)..................-2V to (V+ + 2V)
or 20mA, whichever occurs first
Current (any terminal, except S or D) .................................30mA
Continuous Current, S or D .................................................20mA
Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) ..40mA
Continuous Power Dissipation (T
A
= +70°C)
Plastic DIP (derate 10.53mW/°C above +70°C) ..........842mW
QFN (derate 19.2mW/°C above +70°C) ....................1538mW
Narrow SO (derate 8.70mWI°C above +70°C) ............696mW
Wide SO (derate 9.52mW/°C above +70°C)................762mW
CERDIP (derate 10.00mW/°C above +70°C) ...............800mW
Operating Temperature Ranges:
DG50_ACJ/CWE/CGE ........................................0°C to +70°C
DG50_ABK ......................................................-20°C to +85°C
DGS0_ADJ/DY/EWE/EGE ................................-40°C to +85°C
DG50_AAK ....................................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1:
Signals on S_, D_, or IN_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current
ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = 15V, V- = -15V, GND = OV,
T
A
= +25°C,
unless otherwise noted.)
PARAMETER
SWITCH
Analog Signal Range
V
ANALOG
Sequence each
switch on,
V
AL
= 0.8V,
V
AH
= 2.4V
(Note 4)
V
D
= 10V,
I
S
= -200µA
V
D
= 10V,
I
S
= -200µA
-15
170
+15
300
-15
170
+15
350
Ω
130
300
130
350
V
SYMBOL
CONDITIONS
DG508AA
DG508AD/E/B/C
DG509AA
DG509AD/E/B/C
MIN TYP
MAX MIN TYP
MAX
UNITS
Drain-Source On-
Resistance
R
DS(ON)
Greatest Change in
Drain-Source On-
Resistance
Between Channels
Source Off-
Leakage Current
Drain Off- DG508A
Leakage
Current
DG509A
DG508A
∆R
DS(ON)
R
max
−
R
DS(ON)
min
∆R
DS(ON)
=
DS(ON)
,
R
DS(ON)
6
6
%
-10V
≥
V
S
≥
10V
I
S(OFF)
V
EN
= 0V
V
S
= 10V, V
D
= -10V
V
S
= -10V, V
D
= 10V
V
D
= 10V, V
S
= -10V
V
D
= 10V, V
S
= -10V
V
D
= 10V, V
S
= -10V
V
D
= -10V, V
S
= 10V
V
S(all)
= V
D
= 10V
V
S(all)
= V
D
= -10V
V
S(all)
= V
D
= 10V
V
S(all)
= V
D
= -10V
-2
-2
-0.5
-2
-2
0.002
-0.005
0.01
-0.015
0.005
-0.008
0.015
-0.03
0.007
-0.015
2
-5
2
-5
2
-5
2
-5
0.5
-1
0.002
-0.005
0.01
-0.015
0.005
-0.008
0.015
-0.03
0.007
-0.015
5
nA
5
5
5
nA
1
nA
I
D(OFF)
V
EN
= 0V
Drain On-
Leakage
Current
I
D(ON)
DG509A
Sequence each
switch on,
V
AL
= 0.8V
V
AH
= 2.4V
(Note 2)
2
_______________________________________________________________________________________
MAXIM [ MAXIM INTEGRATED PRODUCTS ]
