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32C408BRPFS-25 参数 Datasheet PDF下载

32C408BRPFS-25图片预览
型号: 32C408BRPFS-25
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位) SRAM [4 Megabit (512K x 8-Bit) SRAM]
分类和应用: 存储静态存储器
文件页数/大小: 11 页 / 180 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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4 Megabit (512K x 8-Bit) SRAM
F
IGURE
2. T
IMING
W
AVEFORM OF
W
RITE
C
YCLE
(OE L
OW
F
IXED
)
32C408B
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going low and
WE going low: A write ends at the earliest transition among CS going high or WE going high. t
WP
is measured from beginning
of write to end of write.
3. t
CW
is measured from the later of CS going low to end of write.
4. t
AS
is measured from the address valid to the beginning of write.
5. t
WR
is measured from the end of write to the address change. TWR applied in case a write ends as CS or WE going high.
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write
cycle.
8. IC CS goes low simultaneously with WE going low or after WE going low, the outputs remain high impedance state.
9. D
OUT
is the read data of the new address.
10.When CS is low: I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
Memory
F
IGURE
3. T
IMING
W
AVEFORM OF
R
EAD
C
YCLE(1)
(A
DDRESS
C
ONTROLLED
, CS = OE = V
IL
, WE = V
IH
)
05.02.02 Rev 7
All data sheets are subject to change without notice
6
©2002 Maxwell Technologies
All rights reserved.