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48SD1616RPFI 参数 Datasheet PDF下载

48SD1616RPFI图片预览
型号: 48SD1616RPFI
PDF下载: 下载PDF文件 查看货源
内容描述: 256 MB SDRAM的4梅格X 16位x 4银行 [256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks]
分类和应用: 动态存储器
文件页数/大小: 42 页 / 595 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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48SD1616  
256Mb (4-Meg X 16-Bit X 4-Banks) SDRAM  
DQMU/DQML Truth Table  
COMMAND  
SYMBOL  
CKE=N-1  
H
CKE=N  
x
DQMU  
DQML  
x
Upper byte (DQ8 to DQ15) write enable/out-  
put enable  
ENBU  
L
Lower byte (DQ0 to DQ7) write enable/out-  
put enable  
ENBL  
MASKU  
MASKL  
H
H
H
x
x
x
x
L
x
Upper byte (DQ8 to DQ15) write inhibit/out-  
put disable  
H
x
Lower byte (DQ0 to DQ7) write inhibit/out-  
put disable  
H
Note: H: V L: V x V or V  
IL  
IH  
IL  
IH  
Write: IDID is Needed  
Read: IDOD is Needed  
The SDRAM can mask input/output data by means of DQMU/DQML.  
DQMU masks the upper byte and DQML masks the lower byte.  
During reading, the output buffer is set to Low-Z by setting DQMU/DQML to Low, enabling data output. On  
the other hand, when DQMU/DQML is set High, the output buffer becomes High-Z, disabling data output.  
During writing, data is written by setting DQMU/DQML to Low. When DQMU/DQML is set to High, the  
previous data is held ( the new data is not written). Desired data can be masked during burst read or burst  
write by setting DQMU/DQML. For more details, refer to the DQMU/DQML control section of the SDRAM  
operating instructions.  
01.07.05 REV 4  
All data sheets are subject to change without notice 10  
©2005 Maxwell Technologies  
All rights reserved.