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128M8 参数 Datasheet PDF下载

128M8图片预览
型号: 128M8
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB : X4,X8 , X16 DDR3 SDRAM [1Gb: x4, x8, x16 DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 181 页 / 8341 K
品牌: MDTIC [ Micon Design Technology Corporation ]
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1Gb : x4, x8, x16 DDR3 SDRAM  
Op e ra t io n s  
t
Fig u re 53: MRS-t o -n o n MRS Co m m a n d Tim in g ( MOD)  
T0  
T1  
T2  
Ta0  
Ta1  
Ta2  
CK#  
CK  
non  
MRS  
NOP  
NOP  
NOP  
NOP  
Command  
MRS  
t
MOD  
Address  
CKE  
Valid  
Valid  
Valid  
Old  
setting  
New  
setting  
Updating setting  
Indicates A Break in  
Time Scale  
Dont Care  
Notes: 1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP  
must be satisfied, and no data bursts can be in progress).  
t
2. Prior to Ta2 when MOD (MIN) is being satisfied, no commands (except NOP/DES) may be  
issued.  
3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satisfied  
prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until  
tMOD (MIN) is satisfied at Ta2.  
4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which time  
power-down may occur (see "Power-Down Mode" on page 151).  
Mo d e Re g ist e r 0 (MR0)  
The base register, MR0, is used to define various DDR3 SDRAM modes of operation.  
These definitions include the selection of a burst length, burst type, CAS latency, oper-  
ating mode, DLL RESET, write recovery, and precharge power-down mode, as shown in  
Figure 54 on page 110.  
Bu rst Le n g t h  
Burst length is defined by MR0[1: 0] (see Figure 54 on page 110). Read and write accesses  
to the DDR3 SDRAM are burst-oriented, with the burst length being programmable to  
“4” (chop mode), “8” (fixed), or selectable using A12 during a READ/ WRITE command  
(on-the-fly). The burst length determines the maximum number of column locations  
that can be accessed for a given READ or WRITE command. When MR0[1:0] is set to “01”  
during a READ/ WRITE command, if A12 = 0, then BC4 (chop) mode is selected. If  
A12 = 1, then BL8 mode is selected. Specific timing diagrams, and turnaround between  
READ/ WRITE, are shown in the READ/ WRITE sections of this document.  
When a READ or WRITE command is issued, a block of columns equal to the burst  
length is effectively selected. All accesses for that burst take place within this block,  
meaning that the burst will wrap within the block if a boundary is reached. The block is  
uniquely selected by A[i:2] when the burst length is set to “4” and by A[i:3] when the  
burst length is set to “8” (where Ai is the most significant column address bit for a given  
configuration). The remaining (least significant) address bit(s) is (are) used to select the  
starting location within the block. The programmed burst length applies to both READ  
and WRITE bursts.  
PDF: 09005aef826aa906/Source: 09005aef82a357c3  
1Gb_DDR3_4.fm - Rev. D 8/1/08 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
109  
©2006 Micron Technology, Inc. All rights reserved.