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93LC66BT-I/SN 参数 Datasheet PDF下载

93LC66BT-I/SN图片预览
型号: 93LC66BT-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 4K的Microwire兼容串行EEPROM [4K Microwire Compatible Serial EEPROM]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 28 页 / 424 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.8
Write
The
WRITE
instruction is followed by 8 bits (If ORG is
low or A-version devices) or 16 bits (If ORG pin is high
or B-version devices) of data which are written into the
specified address. For 93AA66A/B/C and 93LC66A/B/C
devices, after the last data bit is clocked into DI, the
falling edge of CS initiates the self-timed auto-erase and
programming cycle. For 93C66A/B/C devices, the self-
timed auto-erase and programming cycle is initiated by
the rising edge of CLK on the last data bit.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (T
CSL
). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
Note:
Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
FIGURE 2-8:
CS
WRITE TIMING FOR 93AA AND 93LC DEVICES
T
CSL
CLK
DI
1
0
1
An
•••
A0
Dx
•••
D0
T
SV
T
CZ
Ready
DO
High-Z
Busy
T
WC
High-Z
FIGURE 2-9:
CS
WRITE TIMING FOR 93C DEVICES
T
CSL
CLK
DI
1
0
1
An
•••
A0
Dx
•••
D0
T
SV
T
CZ
Ready
DO
High-Z
Busy
T
WC
High-Z
DS21795C-page 10
©
2005 Microchip Technology Inc.