MCP1603/B/L
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating con-
ditions for extended periods may affect device
reliability.
Absolute Maximum Ratings †
V
IN
- GND.......................................................................+6.0V
All Other I/O ............................... (GND - 0.3V) to (V
IN
+ 0.3V)
L
X
to GND .............................................. -0.3V to (V
IN
+ 0.3V)
Output Short Circuit Current ................................. Continuous
Power Dissipation
.......................... Internally Limited
Storage Temperature ....................................-65°C to +150°C
Ambient Temp. with Power Applied ................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM ............................................................................. 4 kV
MM ..............................................................................300V
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, MCP1603/L, V
IN
= SHDN = 3.6V, C
OUT
= C
IN
= 4.7 µF,
L = 4.7 µH, V
OUT
(ADJ) = 1.8V, I
OUT
= 100 mA, T
A
= +25°C.
Boldface
specifications apply over the T
A
range of -40°C
to +85°C.
Parameters
Input Characteristics
Input Voltage
Maximum Output Current
Shutdown Current
Quiescent Current - PFM
Quiescent Current - PWM
V
IN
I
OUT
I
IN_SHDN
I
Q
I
Q
2.7
500
—
—
1.0
—
—
0.1
45
2.7
5.5
—
1
60
4
V
mA
µA
µA
mA
SHDN = GND
SHDN = V
IN
, I
OUT
= 0 mA,
device switching
SHDN = V
IN
, I
OUT
= 0 mA,
device switching (MCP1603B)
Sym
Min
Typ
Max
Units
Conditions
Shutdown/UVLO/Thermal Shutdown Characteristics
SHDN, Logic Input Voltage Low
SHDN, Logic Input Voltage High
SHDN, Input Leakage Current
Undervoltage Lockout
Undervoltage Lockout Hysteresis
Thermal Shutdown
Thermal Shutdown Hysteresis
Note 1:
V
IL
V
IH
I
L_SHDN
UVLO
UVLO
HYS
T
SHD
T
SHD-HYS
—
45
-1.0
2.12
—
—
—
—
—
±0.1
2.28
140
150
10
15
—
1.0
2.43
—
—
—
%V
IN
V
IN
= 2.7V to 5.5V
%V
IN
V
IN
= 2.7V to 5.5V
µA
V
mV
°C
°C
V
IN
= 2.7V to 5.5V
V
IN
Falling
2:
3:
4:
5:
6:
The input voltage should be greater then the output voltage plus headroom voltage; higher load currents
increase the input voltage required for regulation. MCP1603B device requires a minimum load for
regulation. See
for typical operating voltage ranges.
Reference Feedback Voltage Tolerance applies to adjustable output voltage setting.
V
R
is the output voltage setting.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
,
JA
). Exceeding the maximum
allowable power dissipation causes the device to initiate thermal shutdown.
The internal MOSFET switches have an integral diode from the L
X
pin to the V
IN
pin, and from the L
X
pin
to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits
must be adhered to. Thermal protection is not able to limit the junction temperature for these cases.
The current limit threshold is a cycle-by-cycle peak current limit.
2007-2012 Microchip Technology Inc.
DS22042B-page 5
MICROCHIP [ MICROCHIP TECHNOLOGY ]
