MCP1640/B/C/D
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
EN, FB, V
IN,
V
SW
, V
OUT
- GND ........................... +6.5V
EN, FB ...........<greater of V
OUT
or V
IN
> (GND - 0.3V)
Output Short Circuit Current....................... Continuous
Output Current Bypass Mode........................... 400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65
o
C to +150
o
C
Ambient Temp. with Power Applied......-40
o
C to +85
o
C
Operating Junction Temperature........-40
o
C to +125
o
C
ESD Protection On All Pins:
HBM........................................................ 3 kV
MM........................................................ 300 V
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
IN
= 1.2V, C
OUT
= C
IN
= 10 µF, L = 4.7 µH, V
OUT
= 3.3V, I
OUT
= 15 mA,
T
A
= +25°C.
Boldface
specifications apply over the T
A
range of -40
o
C to +85
o
C.
Parameters
Input Characteristics
Minimum Start-Up Voltage
Minimum Input Voltage After
Start-Up
Output Voltage Adjust Range
Maximum Output Current
Sym
V
IN
V
IN
V
OUT
I
OUT
Min
—
—
2.0
Typ
0.65
0.35
Max
0.8
—
5.5
Units
V
V
V
mA
mA
mA
V
pA
µA
Conditions
V
OUT
V
IN
; Note 2
1.2V V
IN
, 2.0V V
OUT
1.5V V
IN
, 3.3V V
OUT
3.3V V
IN
, 5.0V V
OUT
—
—
Measured at V
OUT
= 4.0V;
EN = V
IN
, I
OUT
= 0 mA;
Measured at V
OUT
; EN = V
IN
I
OUT
= 0 mA; Note 3
V
OUT
= EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
V
IN
= V
SW
= 5V; V
OUT
=
5.5V V
EN
= V
FB
= GND
V
IN
= VS
W
= GND;
V
OUT
= 5.5V
V
IN
= 3.3V, I
SW
= 100 mA
V
IN
= 3.3V, I
SW
= 100 mA
150
100
150
350
1.21
10
19
—
—
—
1.245
—
30
Feedback Voltage
Feedback Input Bias Current
Quiescent Current – PFM
Mode
Quiescent Current – PWM
Mode
Quiescent Current – Shutdown
V
FB
I
VFB
I
QPFM
1.175
—
—
I
QPWM
I
QSHDN
—
—
220
0.7
—
2.3
µA
µA
NMOS Switch Leakage
PMOS Switch Leakage
NMOS Switch ON Resistance
PMOS Switch ON Resistance
Note 1:
2:
3:
4:
5:
I
NLK
I
PLK
R
DS(ON)N
R
DS(ON)P
—
—
—
—
0.3
0.05
0.6
0.9
1
0.2
—
—
µA
µA
3.3 K resistive load, 3.3V
OUT
(1 mA).
For V
IN
> V
OUT
, V
OUT
will not remain in regulation.
I
Q
is measured from V
OUT
; V
IN
quiescent current will vary with boost ratio. V
IN
quiescent current can be
estimated by: (I
QPFM
* (V
OUT
/V
IN
)), (I
QPWM
* (V
OUT
/V
IN
)).
220 resistive load, 3.3V
OUT
(15 mA).
Peak current limit determined by characterization, not production tested.
2010 Microchip Technology Inc.
DS22234A-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
