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MCP6G04-E/ST 参数 Datasheet PDF下载

MCP6G04-E/ST图片预览
型号: MCP6G04-E/ST
PDF下载: 下载PDF文件 查看货源
内容描述: 110 μA可选增益放大器 [110 レA Selectable Gain Amplifier]
分类和应用: 仪表放大器放大器电路光电二极管
文件页数/大小: 38 页 / 1284 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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MCP6G01/1R/1U/2/3/4
DIGITAL ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, T
A
= 25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V, V
IN
= (0.3V)/G,
R
L
= 100 kΩ to V
DD
/2, C
L
= 60 pF, GSEL = V
DD
/2, and CS is tied low.
Parameters
GSEL High to Valid Output Time,
G = +10 to +50 Select
GSEL Low to Valid Output Time,
G = +50 to +10 Select
Note 1:
2:
3:
Sym
t
GSH10
t
GSL50
Min
Typ
12
9
Max
Units
µs
µs
Conditions
V
IN
= 30 mV,
GSEL = 0.75V
DD
to V
OUT
= 1.38V
V
IN
= 30 mV,
GSEL = 0.25V
DD
to V
OUT
= 0.42V
GSEL is a tri-level input pin. The gain is 10 when its voltage is low, 1 when it is at mid-suppy, and 50 when it is high.
Not tested in production. Set by design and characterization.
I
SS_SHDN
includes the current through the CS pin, R
L
and R
LAD
, and excludes digital switching currents. The block dia-
gram on the from page shows these current paths (through V
SS
).
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
Sym
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
Min
–40
–40
–65
Typ
256
163
206
120
100
Max
+125
+125
+150
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
Conditions
The MCP6G01/1R/1U/2/3/4 family of SGAs operates over this temperature range, but operation must not cause T
J
to
exceed Maximum Junction Temperature (+150°C).
V
IN
0.150V
0.030V
GSEL
t
GSL1
1.50V
V
OUT
0.15V
0.15V
0.03V
t
GSM10
t
GSH1
1.50V
0.30V
0.03V
t
GSM50
t
GSH10
t
GSL50
1.50V
0.30V
FIGURE 1-1:
Gain Select Timing Diagram.
©
2006 Microchip Technology Inc.
DS22004B-page 5