TC4420/TC4429
1.0
ELECTRICAL
CHARACTERISTICS
†
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................................. – 5V to V
DD
+ 0.3V
Input Current (V
IN
> V
DD
)................................... 50 mA
Power Dissipation (T
A
≤
70°C)
5-Pin TO-220 .................................................... 1.6W
CERDIP ....................................................... 800 mW
DFN ............................................ ...................Note
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Package Power Dissipation (T
A
≤
25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 R
θJ-C
...................................... 10°C/W
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input
Voltage
Logic ‘0’, Low Input Voltage
Input Voltage Range
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
I
S
V
DD
—
—
4.5
0.45
55
—
1.5
150
18
mA
µA
V
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
25
25
55
55
35
35
75
75
ns
ns
ns
ns
C
L
= 2,500 pF
C
L
= 2,500 pF
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
—
—
—
2.1
1.5
6.0
> 1.5
—
0.025
2.8
2.5
—
—
V
V
Ω
Ω
A
A
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
Duty cycle
≤
2%, t
≤
300 µsec
V
IH
V
IL
V
IN
I
IN
2.4
—
–5
–10
1.8
1.3
—
—
—
0.8
V
DD
+0.3
+10
V
V
V
µA
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
2004 Microchip Technology Inc.
DS21419C-page 3
MICROCHIP [ MICROCHIP TECHNOLOGY ]
