3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 75°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
I Version ............................................- 25°C to +85°C
E Version ...........................................- 40°C to +85°C
M Version ........................................- 55°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B ...... VDD + 0.3V to GND – 5.0V
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 55°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 45°C/W
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
PIN CONFIGURATIONS
4423
NC
4424
NC
4425
NC
16-Pin SO Wide
NC
IN A
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
4423
NC
4424
NC
4425
NC
8-Pin DIP
OUT A OUT A
OUT A OUT A
OUT A
OUT A
1
2
3
4
8
7
6
5
NC
IN A
GND
V
GND
V
DD
V
DD
DD
OUT A OUT A OUT A
TC4423
TC4424
TC4425
TC4423
TC4424
TC4425
GND
NC
V
V
DD
V
DD
V
V
V
DD
DD
DD
DD
IN B
OUT B OUT B OUT B
OUT B
OUT B OUT B
IN B
NC
OUT B OUT B OUT B
NC
NC
NC
NC = NO CONNECTION
NOTE: Duplicate pins must both be connected for proper operation.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
Input
VOH
VIL
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
2.4
—
—
—
—
—
0.8
1
V
V
IIN
0V ≤ VIN ≤ VDD
– 1
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
VDD – 0.025
—
—
2.8
3.5
3
—
0.025
5
V
V
Ω
Ω
A
A
—
—
Output Resistance, High
Output Resistance, Low
Peak Output Current
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
RO
—
5
IPK
—
—
IREV
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µsec
1.5
—
—
Switching Time (Note 1)
tR
Rise Time
Fall Time
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
Figure 1, CL = 1800pF
—
—
—
—
23
25
33
38
35
35
75
75
nsec
tF
nsec
nsec
nsec
tD1
tD2
Delay Time
Delay Time
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
—
—
1.5
0.15
2.5
0.25
mA
mA
© 2001 Microchip Technology Inc. DS21421A
TC4423/4/5-6 10/21/96
2
MICROCHIP [ MICROCHIP ]
