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TC4426EOA 参数 Datasheet PDF下载

TC4426EOA图片预览
型号: TC4426EOA
PDF下载: 下载PDF文件 查看货源
内容描述: 1.5A双高速功率MOSFET驱动器 [1.5A Dual High-Speed Power MOSFET Drivers]
分类和应用: 驱动器接口集成电路光电二极管
文件页数/大小: 20 页 / 431 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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TC4426/TC4427/TC4428
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
NC
IN A
GND
IN B
OUT B
V
DD
OUT A
NC
Input A
Ground
Input B
Output B
Supply Input
Output A
No Connection
Function
No Connection
Absolute Maximum Ratings †
Supply Voltage ..................................................... +22V
Input Voltage, IN A or IN B
..................................... (V
DD
+ 0.3V) to (GND – 5V)
Package Power Dissipation (T
A
70°C)
DFN ..............................................................
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Storage Temperature Range.............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25ºC with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Note 1:
2:
3:
I
S
4.5
0.4
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
t
R
t
F
t
D1
t
D2
19
19
20
40
30
30
30
50
ns
ns
ns
ns
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
– 0.025
7
1.5
> 0.5
0.025
10
V
V
Ω
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
Duty cycle
2%, t
300
μs
V
DD
= 18V
V
IH
V
IL
I
IN
2.4
-1.0
0.8
+1.0
V
V
μA
0V
V
IN
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
For V temperature range devices, the V
IH
(Min) limit is 2.0V.
Package power dissipation is dependent on the copper pad area on the PCB.
©
2006 Microchip Technology Inc.
DS21422D-page 3