TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices
2N1479
2N1480
2N1481
2N1482
Qualified Level
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base-Current
Total Power Dissipation @ T
A
= 25
0
C
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
J
,
T
stg
Symbol
R
θ
JC
2N1479
2N1481
40
60
12
1.5
1.0
1.0
2N1480
2N1482
55
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
0
-65 to +200
Max.
35
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
0
TO-5*
Unit
C/W
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc
Collector-Emitter Breakdown Voltage
V
EB
= 1.5 Vdc, I
C
= 0.25 mA
dc
V
EB
= 1.5 Vdc, I
C
= 0.25 mA
dc
Collector-Base Cutoff Current
V
CB
= 30 Vdc
V
CB
= 50 Vdc
Emitter-Base Cutoff Current
V
EB
= 12 Vdc
2N1479, 2N1481
2N1480, 2N1482
2N1479, 2N1481
2N1480, 2N1482
2N1479, 2N1481
2N1480, 2N1482
V
(BR)
CEO
40
55
60
100
5.0
5.0
10
Vdc
V
(BR)
CEX
Vdc
I
CBO
I
EBO
µAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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