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2N1480 参数 Datasheet PDF下载

2N1480图片预览
型号: 2N1480
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅中功率晶体管 [NPN SILICON MEDIUM POWER TRANSISTOR]
分类和应用: 晶体小信号双极晶体管
文件页数/大小: 2 页 / 55 K
品牌: MICROSEMI [ Microsemi ]
 浏览型号2N1480的Datasheet PDF文件第1页  
2N1479, 2N1480, 2N1481, 2N1482 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
ON CHARACTERISTICS (1)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
20  
35  
60  
100  
IC = 200 mAdc, VCE = 4.0 Vdc  
2N1479, 2N1480  
2N1481, 2N1482  
hFE  
Collector-Emitter Saturation Voltage  
IC = 200 mAdc, IB = 20 mAdc  
IC = 200 mAdc, IB = 10 mAdc  
Base-Emitter Voltage  
IC = 200 mAdc, VCE = 4.0 Vdc  
DYNAMIC CHARACTERISTICS  
Forward Current Cutoff Frequency  
IC = 5.0 mAdc, VCB = 28 Vdc  
SWITCHING CHARACTERISTICS  
Total Switching Time  
0.75  
0.75  
Vdc  
Vdc  
2N1479, 2N1480  
2N1481, 2N1482  
VCE(sat)  
1.5  
25  
VBE  
fab  
800  
kHz  
ton + toff  
ms  
VCC = 12 Vdc; RC = 59 W; IB0 = IB2 = 8.5 mAdc; IB1= 20 mAdc  
(1) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
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