140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N6304
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Silicon RF NPN, TO-72, UHF general purpose Low Noise
Transistor
Noise Figure = 5.0 dB (typ) @ f = 450 MHz
High FT - 1.4 GHz (min) @ IC = 10 mAdc
Maximum Available Gain = 14 dB (min) @ f = 500 MHz
2
1
4
3
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Designed primarily for use in High Gain, low noise general purpose UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
15
30
3.5
50
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
200
1.14
mWatts
mW/ ºC
MSC1323.PDF 10-25-99