TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/562
DEVICES
LEVELS
2N6804
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
T
C
= +25°C
Continuous Drain Current
T
C
= +100°C
Max. Power Dissipation
T
C
= +25°C
Drain to Source On State Resistance
Symbol
V
DS
V
GS
I
D1
I
D2
P
tl
R
ds(on)
Value
-100
± 20
-11
-7
75
(1)
0.3
(2)
-55 to +150
Unit
Vdc
Vdc
Adc
Adc
W
Ω
°C
2N6804
TO-204AA (TO-3)
Operating & Storage Temperature
T
op
, T
stg
Note:
(1) Derated Linearly by 0.6 W/°C for T
C
> +25°C
(2) V
GS
= 10Vdc, I
D
= -7A
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 1mAdc
Gate-Source Voltage (Threshold)
V
DS
≥
V
GS
, I
D
= -0.25mA
V
DS
≥
V
GS
, I
D
= -0.25mA, T
j
= +125°C
V
DS
≥
V
GS
, I
D
= -0.25mA, T
j
= -55°C
Gate Current
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V, T
j
= +125°C
Drain Current
V
GS
= 0V, V
DS
= -80V
V
GS
= 0V, V
DS
= -80V, T
j
= +125°C
Static Drain-Source On-State Resistance
V
GS
= -10V, I
D
= -7A pulsed
V
GS
= -10V, I
D
= -11A pulsed
T
j
= +125°C
V
GS
= -10V, I
D
= -7A pulsed
Diode Forward Voltage
V
GS
= 0V, I
D
= -11A pulsed
T4-LDS-0113 Rev. 2 (101520)
Symbol
Min.
Max.
Unit
V
(BR)DSS
V
GS(th)1
V
GS(th)2
V
GS(th)3
I
GSS1
I
GSS2
I
DSS1
I
DSS2
r
DS(on)1
r
DS(on)2
r
DS(on)3
V
SD
-100
-2.0
-1.0
-4.0
-5.0
±100
±200
-25
-0.25
0.3
0.36
0.55
-4.7
Vdc
Vdc
nAdc
µAdc
mAdc
Ω
Ω
Ω
Vdc
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