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2N6804 参数 Datasheet PDF下载

2N6804图片预览
型号: 2N6804
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道MOSFET [P-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 3 页 / 168 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
 浏览型号2N6804的Datasheet PDF文件第1页浏览型号2N6804的Datasheet PDF文件第3页  
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
I
D
= -11A, V
GS
= -10Vdc,
Gate drive impedance = 7.5Ω,
V
DD
= -35Vdc
di/dt
100A/µs, V
DD
-50V,
I
F
= -11A
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
rr
Min.
Max.
60
140
140
140
250
Unit
Symbol
Q
g(on)
Q
gs
Q
gd
Min.
Max.
29
7.1
21
Unit
V
GS
= -10V, I
D
= -11A
V
DS
= -80V
nC
ns
ns
T4-LDS-0113 Rev. 2 (101520)
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