MITSUBISHI IGBT MODULES
CM10MD-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
INVERTER PART
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note. 1)
I
EM (Note. 1)
P
C (Note. 3)
(T
j
= 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Emitter Current
Maximum collector dissipation
G – E Short
C – E Short
T
C
= 25°C
PULSE
T
C
= 25°C
PULSE
T
f
= 25°C
Condition
(Note. 2)
(Note. 2)
Rating
600
±20
10
20
10
20
36
Unit
V
V
A
A
A
A
W
BRAKE PART
Symbol
V
CES
V
GES
I
C
I
CM
P
C (Note. 3)
V
RRM
I
FM (Note. 3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Maximum Collector dissipation
Repetitive peak reverse voltage
Forward current
G – E Short
C – E Short
T
C
= 25°C
PULSE
T
f
= 25°C
Clamp diode part
Clamp diode part
Condition
Rating
600
±20
10
20
36
600
10
Unit
V
V
A
A
W
V
A
(Note. 2)
CONVERTER PART
Symbol
V
RRM
E
a
I
O
I
FSM
I
2
t
Parameter
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
2
t for fusing
Condition
Rating
800
220
10
100
42
Unit
V
V
A
A
A
2
s
3φ rectifying circuit
1 cycle at 60Hz, peak value Non-repetitive
Value for one cycle of surge current
COMMON RATING
Symbol
T
j
T
stg
V
iso
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Condition
Rating
–40 ~ +150
–40 ~ +125
2500
1.47 ~1.96
60
Unit
°C
°C
V
N.m
g
AC 1 min.
Mounting M4 screw
Typical value
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
