MITSUBISHI IGBT MODULES
CM10MD-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
SWITCHING TIMES (ns)
t
f
5
3
2
5
3
2
3
2
t
d(off)
10
2
7
5
3
2
10
2
7
5
3
2
t
rr
I
rr
10
0
7
5
3
2
t
d(on)
V
CC
= 300V
V
GE
= ±15V
R
G
= 63Ω
T
j
= 125°C
2
3
5 7
10
1
2
3
5 7
10
2
t
r
10
1 0
10
10
1 –1
10
2
3
5 7
10
0
2
3
5 7
10
1
10
–1
COLLECTOR CURRENT I
C
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single Pulse
5
3
T
f
= 25°C
2
7
5
3
2
7
5
3
2
7
5
3
2
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7
Single Pulse
5
3
T
f
= 25°C
2
7
5
3
2
7
5
3
2
7
5
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j – f)
10
0
R
th(j – f)
= 3.5°C/W
3
2
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j – f)
10
0
R
th(j – f)
= 4.0°C/W
3
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–2
10
–2
10
–2
10
–2
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
10
–3
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TIME (s)
V
GE
– GATE CHARGE
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
18
16
14
12
10
8
6
4
2
0
0
I
C
= 10A
V
CC
= 200V
V
CC
= 300V
10
20
30
40
50
GATE CHARGE Q
G
(nC)
Feb.1999
REVERSE RECOVERY CURRENT l
rr
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
3
10
1
–di/dt = 20A / µs
7
7
T
j
= 25°C
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
