ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA13H4047M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
30
OUTPUT POWER P
out
(W)
INPUT VSWR
ρ
in
(-)
25
20
15
10
5
ρ
in
η
T
P
out
2
nd
, 3 HARMONICS versus FREQUENCY
-20
HARMONICS (dBc)
-30
-40
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
rd
120
100
80
60
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
TOTAL EFFICIENCY
η
T
(%)
40
20
-50
-60
3
rd
0
0
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
-70
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
DRAIN CURRENT I
DD
(A)
P
out
5
Gp
5
Gp
40
30
4
3
I
DD
40
30
20
4
3
2
I
DD
f=435MHz,
V
DD
=12.5V,
V
GG
=5V
20
10
0
-15 -10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
2
1
0
10
0
-15
-10
-5
0
5
1
0
20
10
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
P
out
5
Gp
40
30
20
4
3
2
I
DD
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
10
0
-15
-10
-5
0
5
1
0
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
I
DD
f=400MHz,
V
GG
=5V,
P
in
=50mW
P
out
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER P
out
(W)
30
25
20
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
f=435MHz,
V
GG
=5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
15
10
5
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
RA13H4047M
MITSUBISHI ELECTRIC
3/8
DRAIN CURRENT
I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
24 Jan 2006
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
