ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA13H4047M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
I
DD
f=470MHz,
V
GG
=5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
10
5
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=400MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER P
out
(W)
30
25
20
15
10
5
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
f=435MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
I
DD
f=470MHz,
V
DD
=12.5V,
P
in
=50mW
6
DRAIN CURRENT I
DD
(A)
5
P
out
4
3
2
1
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
10
5
0
RA13H4047M
MITSUBISHI ELECTRIC
4/8
24 Jan 2006
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
