MITSUBISHI DIODE MODULES
RM150DZ/CZ/UZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
VR
(DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
Voltage class
M
400
480
320
H
800
960
640
24
1200
1350
960
2H
1600
1700
1280
Unit
V
V
V
Symbol
IF
(RMS)
IF
(AV)
I
FSM
I
2t
f
T
j
T
stg
V
iso
Parameter
RMS forward current
Average forward current
Surge (non-repetitive) forward current
I
2t
for fusing
Conditions
Ratings
235
Unit
A
A
A
A
2
s
Hz
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=109°C
One half chcle at 60Hz, peak value
Value for one cycle of surge current
150
3500
5.1
×
10
4
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Charged part to case
Main terminal screw M8
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
1000
–40~+150
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
V
FM
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=150°C, V
RRM
applied
T
j
=25°C, I
FM
=450A, instantaneous meas.
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
—
10
Typ.
—
—
—
—
—
Max.
30
1.35
0.22
0.1
—
Unit
mA
V
°C/
W
°C/
W
MΩ
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
