MITSUBISHI DIODE MODULES
RM150DZ/CZ/UZ-M,-H,-24.-2H
HIGH POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVE
MAXIMUM FORWARD CHARACTERISTIC
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0.5
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
4000
SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
T
j
=25°C
FORWARD CURRENT (A)
3000
2000
1000
1.0
1.5
2.0
2.5
0
1
2 3
5 7 10
20 30
50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM POWER DISSIPATION
250
POWER DISSIPATION (W)
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
10
0
2 3 5 710
1
0.250
TRANSIENT THERMAL IMPEDANCE
(°C/W)
0.200
RESISTIVE, INDUCTIVE LOAD
SINGLE-PHASE
OPERATION
200
THREE-PHASE
OPERATION
DC
OPERATION
0.150
150
0.100
100
0.050
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
50
0
0
50
100
150
200
250
AVERAGE FORWARD CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. AVERAGE FORWARD CURRENT
160
CASE TEMPERATURE (°C)
RESISTIVE, INDUCTIVE LOAD
140
DC
OPERATION
SINGLE-PHASE
OPERATION
THREE-PHASE
OPERATION
120
100
80
60
0
50
100
150
200
250
AVERAGE FORWARD CURRENT (A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
