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MRF5P20180 参数 Datasheet PDF下载

MRF5P20180图片预览
型号: MRF5P20180
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管 [RF POWER FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 8 页 / 583 K
品牌: MOTOROLA [ MOTOROLA, INC ]
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Freescale Semiconductor, Inc.
f = 1930 MHz
Z
load
*
f = 1990 MHz
Z
o
= 25
f = 1990 MHz
Freescale Semiconductor, Inc...
f = 1930 MHz
Z
source
V
DD
= 28 V, I
DQ
= 2 x 800 mA, P
out
= 38 W Avg.
f
MHz
1930
1960
1990
Z
source
6.54 – j16.04
9.70 – j17.92
13.88 – j20.46
Z
load
4.06 – j5.56
3.70 – j5.48
3.64 – j5.76
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
-
Output
Matching
Network
-
Z
source
Z
+
load
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5P20180R6
7