MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5314DW1T1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
TA = –25°C
25°C
0.1
75°C
180
160
140
120
100
80
60
40
20
0
1
2
4
6
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
80 90 100
–25°C
VCE = 10 V
25°C
TA = 75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
4.5
4
Cob , CAPACITANCE (pF)
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
50
f = 1 MHz
lE = 0 V
TA = 25°C
100
TA = 75°C
IC, COLLECTOR CURRENT (mA)
25°C
–25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
25°C
TA = –25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
MOTOROLA [ MOTOROLA, INC ]
