MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5312DW1T1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V
1
TA = –25°C
25°C
TA = 75°C
25°C
100
–25°C
75°C
0.1
0.01
10
0
20
IC, COLLECTOR CURRENT (mA)
40
50
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
100
75°C
10
25°C
TA = –25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
0.001
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
VO = 5 V
9
10
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
TA = –25°C
10
75°C
25°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
MOTOROLA [ MOTOROLA, INC ]
