Numonyx™ StrataFlash® Cellular Memory (M18)
2.0
Functional Description
2.1
Product Overview
The Numonyx™ StrataFlash® Cellular Memory (M18) device provides high read and
write performance at low voltage on a 16-bit data bus.
The flash memory device has a multi-partition architecture with read-while-program
and read-while-erase capability.
The device supports synchronous burst reads up to 108 MHz using ADV# and CLK
address-latching on some litho/density combinations and up to 133 MHz using CLK
address-latching only on some litho/density combinations. It is listed below in the
following table.
Table 4:
M18 Product Litho/Density/Frequency Combinations
Litho (nm)
Density (Mbit)
Supports frequency up to (MHz)
Sync read address-latching
CLK-latching
256
512
133
108
133
133
133
108
133
90
ADV#- and CLK-latching
CLK-latching
128
256
CLK-latching
65
512
CLK-latching
1024
1024
ADV#- and CLK-latching
CLK-latching
In continuous-burst mode, a data Read can traverse partition boundaries.
Upon initial power-up or return from reset, the device defaults to asynchronous array-
read mode. Synchronous burst-mode reads are enabled by programming the Read
Configuration Register. In synchronous burst mode, output data is synchronized with a
user-supplied clock signal. A WAIT signal provides easy CPU-to-flash memory
synchronization.
Designed for low-voltage applications, the device supports read operations with VCC at
1.8 V, and erase and program operations with VPP at 1.8 V or 9.0 V. VCC and VPP can
be tied together for a simple, ultra-low power design. In addition to voltage flexibility, a
dedicated VPP connection provides complete data protection when VPP is less than
VPPLK
.
A Status Register provides status and error conditions of erase and program
operations.
One-Time-Programmable (OTP) registers allow unique flash device identification that
can be used to increase flash content security. Also, the individual block-lock feature
provides zero-latency block locking and unlocking to protect against unwanted program
or erase of the array.
The flash memory device offers three power savings features:
• Automatic Power Savings (APS) mode: The device automatically enters APS
following a read-cycle completion.
• Standby mode: Standby is initiated when the system deselects the device by
deasserting CE#.
Datasheet
10
April 2008
309823-10
NUMONYX [ NUMONYX B.V ]
