M28W160CT, M28W160CB
Table 28. CFI Query System Interface Information
Offset
Data
Description
Value
V
V
V
V
Logic Supply Minimum Program/Erase or Write voltage
DD
DD
PP
PP
1Bh
0027h
2.7V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
Logic Supply Maximum Program/Erase or Write voltage
1Ch
1Dh
1Eh
0036h
00B4h
00C6h
3.6V
11.4V
12.6V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
n
1Fh
20h
21h
22h
23h
24h
25h
26h
0004h
0004h
000Ah
0000h
0005h
0005h
0003h
0000h
16µs
16µs
1s
Typical time-out per single word program = 2 µs
n
Typical time-out for Double Word Program = 2 µs
n
Typical time-out per individual block erase = 2 ms
n
NA
Typical time-out for full chip erase = 2 ms
n
512µs
512µs
8s
Maximum time-out for word program = 2 times typical
n
Maximum time-out for Double Word Program = 2 times typical
n
Maximum time-out per individual block erase = 2 times typical
n
NA
Maximum time-out for chip erase = 2 times typical
36/50
NUMONYX [ NUMONYX B.V ]
