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M29W640GT60ZA6E 参数 Datasheet PDF下载

M29W640GT60ZA6E图片预览
型号: M29W640GT60ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8MB X8或X16 4Mb的,页) 3V供应闪存 [64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 90 页 / 1676 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W640GH, M29W640GL, M29W640GT, M29W640GB  
Figure 6. Write Enable controlled Program waveforms (8-bit mode)  
Command Interface  
3rd cycle  
4th cycle  
PA  
Read cycle  
Data Polling  
PA  
tAVAV  
tAVAV  
A0-A20/  
A–1  
555h  
tAVWL  
tWLAX  
tELQV  
tELWL  
tGHWL  
tWHEH  
E
tGLQV  
G
tWLWH  
tWHWL  
W
tDVWH  
tWHWH1  
DQ7  
tGHQZ  
tAXQX  
DQ0-DQ7/  
DQ8-DQ15  
D
AOh  
PD  
tWHDX  
D
OUT  
OUT  
AI12779  
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check  
of Status register Data Polling bit and by a read operation that outputs the data, DOUT, programmed by the previous  
Program command.  
2. PA is address of the memory location to be programmed. PD is the data to be programmed.  
3. DQ7 is the complement of the data bit being programmed to DQ7 (see Section 5.1: Data Polling Bit (DQ7)).  
4. Addresses differ in x8 mode.  
5. See Table 19: Write ac characteristics and Table 18: Read ac characteristics for details on the timings.  
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