BS170
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 100
mAdc)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain−Source On Resistance
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
Drain Cutoff Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 250 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(I
D
= 0.2 Adc) See Figure 1
Turn−Off Time
(I
D
= 0.2 Adc) See Figure 1
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
t
on
t
off
−
−
4.0
4.0
10
10
ns
ns
C
iss
−
−
60
pF
V
GS(Th)
r
DS(on)
I
D(off)
g
fs
0.8
−
−
−
2.0
1.8
−
200
3.0
5.0
0.5
−
Vdc
W
mA
mmhos
I
GSS
V
(BR)DSS
−
60
0.01
90
10
−
nAdc
Vdc
Symbol
Min
Typ
Max
Unit
ORDERING INFORMATION
Device
BS170
BS170G
BS170RLRA
BS170RLRM
BS170RLRP
BS170RL1
BS170ZL1
TO−92 (
(TO−226)
)
Package
TO−92 (TO−226)
TO−92 (TO−226)
(Pb−Free)
Shipping
†
1000 Unit / Box
1000 Unit / Box
2000 Tape & Reel
2000 Tape & Ammo Box
2000 Tape & Ammo Box
2000 Tape & Reel
2000 Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
