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MBR120LSFT1G 参数 Datasheet PDF下载

MBR120LSFT1G图片预览
型号: MBR120LSFT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基整流电源 [Surface Mount Schottky Power Rectifier]
分类和应用: 整流二极管光电二极管PC
文件页数/大小: 6 页 / 62 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBR120LSFT1
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated V
R
, T
L
= 115°C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
L
= 110°C)
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated V
R
, T
J
= 25°C)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
I
FSM
T
stg
T
J
dv/dt
Value
20
Unit
V
1.0
2.0
50
−55 to 150
−55 to 125
10,000
A
A
A
°C
°C
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
Symbol
R
tjl
R
tjl
R
tja
R
tja
Value
26
21
325
82
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
(V
R
= 20 V)
(V
R
= 10 V)
3. Pulse Test: Pulse Width
250
ms,
Duty Cycle
2%.
I
R
V
F
T
J
= 25°C
0.34
0.45
0.65
T
J
= 25°C
0.40
0.10
T
J
= 85°C
0.26
0.415
0.67
T
J
= 85°C
25
18
mA
V
http://onsemi.com
2