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MBR120LSFT1G 参数 Datasheet PDF下载

MBR120LSFT1G图片预览
型号: MBR120LSFT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基整流电源 [Surface Mount Schottky Power Rectifier]
分类和应用: 整流二极管光电二极管PC
文件页数/大小: 6 页 / 62 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBR120LSFT1
1000
T
J
, DERATED OPERATING
TEMPERATURE (°C)
125
120
115
110
105
100
95
90
85
80
75
70
65
0
2.0
4.0
6.0
324.9°C/W
400°C/W
8.0
10
12
14
16
18
20
R
qJA
= 25.6°C/W
T
J
= 25°C
C, CAPACITANCE (pF)
100
130°C/W
235°C/W
10
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation:
T
J
= T
Jmax
− r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
− r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
r(t), TRANSIENT THERMAL RESISTANCE
1000
D = 0.5
100
0.2
0.1
0.05
P
(pk)
0.01
1
SINGLE PULSE
Test Type > Min Pad < Die Size 38x38 @ 75% mils
0.1
0.000001 0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
100
1000
t
1
t
2
10
DUTY CYCLE, D = t
1
/t
2
qJA
= 321.8
°C/W
Figure 9. Thermal Response
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4