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MJ11012G 参数 Datasheet PDF下载

MJ11012G图片预览
型号: MJ11012G
PDF下载: 下载PDF文件 查看货源
内容描述: 大电流互补硅晶体管 [High-Current Complementary Silicon Transistors]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 4 页 / 116 K
品牌: ONSEMI [ ONSEMI ]
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MJ11015 (PNP); MJ11012, MJ11016 (NPN)  
COLLECTOR  
COLLECTOR  
PNP  
NPN  
MJ11015  
MJ11012  
MJ11016  
BASE  
BASE  
8.0 k  
40  
8.0 k  
40  
EMITTER  
EMITTER  
Figure 1. Darlington Circuit Schematic  
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted.)  
C
Characteristics  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage(1)  
V
Vdc  
(BR)CEO  
(I = 100 mAdc, I = 0)  
MJ11012  
MJ11015, MJ11016  
60  
120  
C
B
CollectorEmitter Leakage Current  
(V = 60 Vdc, R = 1k ohm)  
I
mAdc  
CER  
MJ11012  
MJ11015, MJ11016  
MJ11012  
1
1
5
5
CE  
BE  
(V = 120 Vdc, R = 1k ohm)  
CE  
BE  
(V = 60 Vdc, R = 1k ohm, T = 150_C)  
CE  
BE  
C
(V = 120 Vdc, R = 1k ohm, T = 150_C)  
MJ11015, MJ11016  
CE  
BE  
C
Emitter Cutoff Current  
(V = 5 Vdc, I = 0)  
I
5
mAdc  
mAdc  
EBO  
CEO  
BE  
C
CollectorEmitter Leakage Current  
(V = 50 Vdc, I = 0)  
I
1
CE  
B
ON CHARACTERISTICS(1)  
DC Current Gain  
h
FE  
(I = 20 Adc,V = 5 Vdc)  
1000  
200  
C
CE  
(I = 30 Adc, V = 5 Vdc)  
C
CE  
CollectorEmitter Saturation Voltage  
(I = 20 Adc, I = 200 mAdc)  
V
V
Vdc  
Vdc  
CE(sat)  
3
4
C
B
(I = 30 Adc, I = 300 mAdc)  
C
B
BaseEmitter Saturation Voltage  
(I = 20 A, I = 200 mAdc)  
BE(sat)  
3.5  
5
C
B
(I = 30 A, I = 300 mAdc)  
C
B
DYNAMIC CHARACTERISTICS  
CurrentGain Bandwidth Product  
h
fe  
4
MHz  
(I = 10 A, V = 3 Vdc, f = 1 MHz)  
C
CE  
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.  
http://onsemi.com  
2