MJ11015 (PNP); MJ11012, MJ11016 (NPN)
30 k
20 k
2
1
PNP MJ11015
NPN MJ11012, MJ11016
0.5
10 k
0.2
0.1
7 k
5 k
0.05
3 k
2 k
PNP MJ11015
0.02
0.01
NPN MJ11012, MJ11016
V
= 3 Vdc
700
500
CE
V
= 5 Vdc
CE
T = 25°C
0.005
I
C
= 10 mAdc
J
T = 25°C
J
300
0.3
0.5 0.7
1
2
3
5
7
10
20 30
10
20 30
50 70 100
200 300 500 700 1.0 k
I , COLLECTOR CURRENT (AMP)
C
f, FREQUENCY (kHz)
Figure 2. DC Current Gain (1)
Figure 3. Small−Signal Current Gain
5
4
3
2
1
0
50
PNP MJ11015
20
10
5
NPN MJ11012, MJ11016
T = 25°C
J
I /I = 100
2
C B
1
0.5
0.2
BONDING WIRE LIMITATION
V
BE(sat)
0.1
0.05
THERMAL LIMITATION @ T = 25°C
C
SECOND BREAKDOWN LIMITATION
V
CE(sat)
0.02
0.01
MJ11012
MJ11015, MJ11016
20 30
0.1
0.2
0.5
1
2
5
10 20
50 100
2
3
5
7
10
50 70 100
200
I , COLLECTOR CURRENT (AMP)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. “On” Voltages (1)
Figure 5. Active Region DC Safe Operating Area
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
breakdown. Safe operating area curves indicate I − V
C
CE
limits of the transistor that must be observed for reliable
operations e.g., the transistor must not be subjected to
greater dissipation than the curves indicate.
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