MMBF4416LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (I
G
= 1.0
mAdc,
V
DS
= 0)
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0)
(V
GS
= 20 Vdc, V
DS
= 0, T
A
= 150°C)
V
(BR)GSS
I
GSS
V
GS(off)
V
GS
30
−
−
−
−1.0
−
1.0
200
−6.0
−5.5
Vdc
nAdc
Vdc
Vdc
Symbol
Min
Max
Unit
Gate Source Cutoff Voltage (I
D
= 1.0 nAdc, V
DS
= 15 Vdc)
Gate Source Voltage (I
D
= 0.5 mAdc, V
DS
= 15 Vdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V
GS
= 15 Vdc, V
GS
= 0)
Gate−Source Forward Voltage (I
G
= 1.0 mAdc, V
DS
= 0)
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Output Admittance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Input Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 10 MHz)
Output Capacitance (V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
I
DSS
V
GS(f)
5.0
−
15
1.0
mAdc
Vdc
mmhos
mmhos
pF
pF
pF
|Y
fs
|
|y
os
|
C
iss
C
rss
C
oss
4500
−
−
−
−
7500
50
4.0
0.8
2.0
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25°C)
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
30
20
10
7.0
5.0
3.0
2.0
g
is
@ 0.25 I
DSS
1.0
0.7
0.5
0.3
10
20
30
b
is
@ I
DSS
5.0
3.0
2.0
b
rs
@ I
DSS
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
g
rs
@ I
DSS
, 0.25 I
DSS
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
0.25 I
DSS
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
g
is
@ I
DSS
b
is
@ 0.25 I
DSS
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 1. Input Admittance (y
is
)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
|b
fs
| @ I
DSS
|b
fs
| @ 0.25 I
DSS
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
Figure 2. Reverse Transfer Admittance (y
rs
)
g
fs
@ I
DSS
g
fs
@ 0.25 I
DSS
b
os
@ I
DSS
and 0.25 I
DSS
g
os
@ I
DSS
g
os
@ 0.25 I
DSS
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 3. Forward Transadmittance (y
fs
)
http://onsemi.com
2
Figure 4. Output Admittance (y
os
)
ONSEMI [ ON SEMICONDUCTOR ]
