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MMBT5551LT1 参数 Datasheet PDF下载

MMBT5551LT1图片预览
型号: MMBT5551LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压晶体管 [High Voltage Transistors]
分类和应用: 晶体小信号双极晶体管
文件页数/大小: 6 页 / 101 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT5550LT1, MMBT5551LT1
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
2.5
2.0
1.5
1.0
0.5
0
− 0.5
− 1.0
− 1.5
− 2.0
− 2.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
q
VB
for V
BE(sat)
q
VC
for V
CE(sat)
10.2 V
V
in
10
ms
INPUT PULSE
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
0.25
mF
V
BB
−8.8 V
100
R
B
5.1 k
V
in
100
1N914
V
CC
30 V
3.0 k
R
C
V
out
T
J
= − 55°C to +135°C
Values Shown are for I
C
@ 10 mA
Figure 5. Temperature Coefficients
Figure 6. Switching Time Test Circuit
100
70
50
C, CAPACITANCE (pF)
30
1000
T
J
= 25°C
500
300
t, TIME (ns)
200
100
50
C
obo
30
20
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
10
0.2 0.3 0.5
20 30
2.0 3.0 5.0 10
I
C
, COLLECTOR CURRENT (mA)
50
t
d
@ V
EB(off)
= 1.0 V
V
CC
= 120 V
t
r
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
20
10
7.0
5.0
3.0
2.0
1.0
0.2
C
ibo
1.0
100
200
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
Figure 8. Turn−On Time
5000
3000
2000
1000
500
300
200
100
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
I
C
, COLLECTOR CURRENT (mA)
100
200
t
s
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
Figure 9. Turn−Off Time
http://onsemi.com
4