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MMBT5401LT1G 参数 Datasheet PDF下载

MMBT5401LT1G图片预览
型号: MMBT5401LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管( PNP硅) [High Voltage Transistor(PNP Silicon)]
分类和应用: 晶体小信号双极晶体管开关光电二极管高压
文件页数/大小: 6 页 / 95 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT5401LT1
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
0.9
0.8
V, VOLTAGE (VOLTS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
T
J
= 25°C
2.5
2.0
1.5
1.0
0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
0.1
q
VB
for V
BE(sat)
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
q
VC
for V
CE(sat)
T
J
= − 55°C to 135°C
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
10.2 V
V
in
10
ms
INPUT PULSE
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
0.25
mF
100
R
B
5.1 k
V
in
100
1N914
3.0 k
R
C
V
out
C, CAPACITANCE (pF)
V
BB
+8.8 V
V
CC
−30 V
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
V
R
, REVERSE VOLTAGE (VOLTS)
C
ibo
T
J
= 25°C
C
obo
Values Shown are for I
C
@ 10 mA
10
20
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
700
500
300
t, TIME (ns)
200
100
70
50
30
20
2000
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t, TIME (ns)
1000
700
500
300
200
100
70
50
30
50
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
I
C
/I
B
= 10
T
J
= 25°C
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
t
d
@ V
BE(off)
= 1.0 V
V
CC
= 120 V
1.0
2.0 3.0 5.0
10
20 30
10
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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