欢迎访问ic37.com |
会员登录 免费注册
发布采购

MMBTA42LT1 参数 Datasheet PDF下载

MMBTA42LT1图片预览
型号: MMBTA42LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管( NPN硅) [High Voltage Transistors(NPN Silicon)]
分类和应用: 晶体晶体管高压
文件页数/大小: 4 页 / 58 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号MMBTA42LT1的Datasheet PDF文件第1页浏览型号MMBTA42LT1的Datasheet PDF文件第2页浏览型号MMBTA42LT1的Datasheet PDF文件第4页  
MMBTA42LT1, MMBTA43LT1
120
100
hFE , DC CURRENT GAIN
80
60
40
−55°C
20
0
25°C
T
J
= +125°C
V
CE
= 10 Vdc
0.1
1.0
I
C
, COLLECTOR CURRENT (mA)
10
100
Figure 1. DC Current Gain
C
eb
@ 1MHz
C, CAPACITANCE (pF)
BANDWIDTH (MHz)
f T, CURRENT−GAIN
100
80
70
60
50
40
30
20
10
1.0
2.0 3.0
5.0 7.0 10
20
30
I
C
, COLLECTOR CURRENT (mA)
T
J
= 25°C
V
CE
= 20 V
f = 20 MHz
50 70 100
10
1.0
C
cb
@ 1MHz
0.1
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
Figure 3. Current−Gain − Bandwidth
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@ −55°C, I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@ −55°C, I
C
/I
B
= 10
V
BE(on)
@ 25°C, V
CE
= 10 V
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@ −55°C, V
CE
= 10 V
Figure 4. “ON” Voltages
http://onsemi.com
3