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MMT10B260T3G 参数 Datasheet PDF下载

MMT10B260T3G图片预览
型号: MMT10B260T3G
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管浪涌保护器高压双向TSPD [Thyristor Surge Protectors High Voltage Bidirectional TSPD]
分类和应用: 触发装置硅浪涌保护器光电二极管高压数据判读及分析中心
文件页数/大小: 6 页 / 60 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMT10B230T3, MMT10B260T3, MMT10B310T3
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Off−State Voltage − Maximum
MMT10B230T3
MMT10B260T3
MMT10B310T3
Maximum Pulse Surge Short Circuit Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2) (−20°C to +65°C)
2 x 10
msec
10 x 700
msec
10 x 1000
msec
Maximum Non−Repetitive Rate of Change of On−State Current
Double Exponential Waveform,
R = 2.0, L = 1.5
mH,
C = 1.67
mF,
I
pk
= 110A
Symbol
V
DM
Value
"170
"200
"270
A(pk)
Unit
V
I
PPS1
I
PPS2
I
PPS3
di/dt
"500
"180
"100
"100
A/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
THERMAL CHARACTERISTICS
Characteristic
Operating Temperature Range
Blocking or Conducting State
Overload Junction Temperature − Maximum Conducting State Only
Instantaneous Peak Power Dissipation (I
pk
= 100 A, 10x1000
msec
@ 25°C)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
T
J1
T
J2
P
PK
T
L
Max
−40 to + 125
+ 175
4000
260
Unit
°C
°C
W
°C
ORDERING INFORMATION
Device
MMT10B230T3
MMT10B230T3G
MMT10B260T3
MMT10B260T3G
MMT10B310T3
MMT10B310T3G
Package
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
(12mm) Tape & Reel
2500 Units per Reel
Shipping
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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