MMT10B230T3, MMT10B260T3, MMT10B310T3
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, I
SC
= 1.0 A, Vdc = 1000 V)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms), MMT10B230T3, G
R
I
= 1.0 kW, t = 0.5 cycle) (Note 3)
MMT10B260T3, G
MMT10B310T3, G
(+65°C)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
On−State Voltage (I
T
= 1.0 A)
(PW
≤
300
ms,
Duty Cycle
≤
2%) (Note 3)
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kW)
Both polarities
Holding Current (Both polarities)
V
S
= 500 Volts; I
T
(Initiating Current) =
"1.0
A
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
3. Measured under pulse conditions to reduce heating.
(Note 3)
I
D1
I
D2
V
T
I
BO
I
H
dv/dt
C
O
V
(BO)
−
−
−
−
−
−
dV
(BO)
/dT
J
V
(BR)
−
−
−
−
−
−
−
150
2000
−
−
190
240
280
−
−
1.53
260
270
−
65
160
−
−
−
2.0
5.0
5.0
−
−
−
−
200
mA
V
mA
mA
V/ms
pF
−
−
−
−
−
−
−
0.08
265
320
365
290
340
400
−
%/°C
V
Symbol
V
(BO)
−
−
−
−
−
−
−
−
−
−
−
−
265
320
365
290
340
400
V
Min
Typ
Max
Unit
V
(+65°C)
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
I
D1
, I
D2
V
D1
, V
D2
V
BR
V
BO
I
BO
I
H
V
TM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
+ Voltage
V
D1
V
D2
V
(BR)
I
H
I
D1
I
D2
I
(BO)
V
TM
V
(BO)
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