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NCV33152DR2 参数 Datasheet PDF下载

NCV33152DR2图片预览
型号: NCV33152DR2
PDF下载: 下载PDF文件 查看货源
内容描述: 高速双MOSFET驱动器 [HIGH SPEED DUAL MOSFET DRIVERS]
分类和应用: 驱动器接口集成电路光电二极管
文件页数/大小: 12 页 / 154 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MC34152, MC33152, NCV33152
Vclamp, OUTPUT CLAMP VOLTAGE (V)
V
CC
= 12 V
V
in
= 0 V to 5.0 V
C
L
= 1.0 nF
T
A
= 25°C
3.0
2.0
1.0
0
0
GND
−1.0
0
0.2
0.4
0.6
V
CC
High State Clamp (Drive
Output Driven Above V
CC
)
90% −
V
CC
= 12 V
80
ms
Pulsed Load
120 Hz Rate
T
A
= 25°C
Drive Output
10% −
Logic Input
50 ns/DIV
Low State Clamp (Drive
Output Driven Below Ground)
0.8
1.0
1.2
1.4
I
O
, OUTPUT CLAMP CURRENT (A)
Figure 8. Propagation Delay
Figure 9. Drive Output Clamp Voltage
versus Clamp Current
V sat, OUTPUT SATURATION VOLTAGE (V)
V sat, OUTPUT SATURATION VOLTAGE (V)
0
V
CC
0
−0.5
−0.7
−0.9
−1.1
1.9
1.7
1.5
1.0
0.8
0.6
0
−55
Source Saturation
(Load to Ground)
V
CC
= 12 V
V
CC
I
source
= 10 mA
I
source
= 400 mA
−1.0
−2.0
−3.0
3.0
2.0
1.0
0
0
0.2
0.4
Source Saturation V
CC
= 12 V
(Load to Ground) 80
ms
Pulsed Load
120 Hz Rate
T
A
= 25°C
I
sink
= 400 mA
Sink Saturation
(Load to V
CC
)
0.6
0.8
I
sink
= 10 mA
Sink Saturation
(Load to V
CC
)
−25
0
GND
25
50
75
100
125
GND
1.0
1.2
1.4
I
O
, OUTPUT CLAMP CURRENT (A)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 10. Drive Output Saturation Voltage
versus Load Current
Figure 11. Drive Output Saturation Voltage
versus Temperature
90% −
90% −
V
CC
= 12 V
V
in
= 0 V to 5.0 V
C
L
= 1.0 nF
T
A
= 25°C
10% −
V
CC
= 12 V
V
in
= 0 V to 5.0 V
C
L
= 1.0 nF
T
A
= 25°C
10% −
10 ns/DIV
10 ns/DIV
Figure 12. Drive Output Rise Time
Figure 13. Drive Output Fall Time
http://onsemi.com
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