Transistor
P
C
— Ta
1.6
1200
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
1000
–10
I
B
=–200µA
800
–180µA
–160µA
–140µA
–120µA
–100µA
400
–80µA
–60µA
200
0.2
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
–40µA
–20µA
0
0
– 0.4
– 0.8
2SB1073
I
C
— V
CE
–12
V
CE
=–2V
I
C
— V
BE
Collector power dissipation P
C
(W)
1.4
1.2
1.0
0.8
0.6
0.4
Collector current I
C
(mA)
Collector current I
C
(A)
–8
25˚C
–6
Ta=75˚C
–25˚C
600
–4
–2
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–3
–1
Ta=75˚C
25˚C
I
C
/I
B
=30
Ta=25˚C
600
h
FE
— I
C
120
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=–2V
I
E
=0
f=1MHz
Ta=25˚C
Forward current transfer ratio h
FE
500
100
400
Ta=75˚C
300
25˚C
–25˚C
80
– 0.3
– 0.1
– 0.03
–25˚C
– 0.01
60
200
40
100
20
– 0.003
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
