Power Transistors
P
C
— Ta
80
8
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
T
C
=25˚C
7
2SC3795, 2SC3795A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=5
30
10
3
1
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03
25˚C
T
C
=100˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
70
60
50
40
30
20
10
0
0
20
40
(2)
(3)
(1)
Collector current I
C
(A)
6
5
4
3
2
1
0
I
B
=1200mA
1000mA
800mA
600mA
400mA
300mA
200mA
150mA
100mA
50mA
20mA
60
80 100 120 140 160
0
2
4
6
8
10
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
1000
I
C
/I
B
=5
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
T
C
=–25˚C
100˚C
h
FE
— I
C
1000
V
CE
=5V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=10V
f=1MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
100
T
C
=100˚C
30
–25˚C
10
3
1
0.3
0.1
0.01 0.03
25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency f
T
(MHz)
300
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(I
B1
=–I
B2
)
V
CC
=200V
T
C
=25˚C
t
stg
t
on
t
f
0.3
0.1
0.03
0.01
Area of safe operation (ASO)
10
3
1
0.3
0.1
0.03
0.01
Non repetitive pulse
0.003 T =25˚C
C
I
CP
I
C
10ms
DC
t=0.5ms
1ms
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
0.1
Switching time t
on
,t
stg
,t
f
(
µs
)
10
3
1
Collector current I
C
(A)
0.3
1
3
10
30
100
0
1
2
3
4
5
6
7
8
1
3
10
30
100
300
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
2SC3795/2SC3795A
1000
PANASONIC [ PANASONIC SEMICONDUCTOR ]
