Transistor
P
C
— Ta
1.4
2SD2441
I
C
— V
CE
1.2
Ta=25˚C
1.0
I
B
=3.0mA
2.5mA
0.8
2.0mA
0.6
1.5mA
2.0
2.4
V
CE
=1V
I
C
— V
BE
Collector power dissipation P
C
(W)
1.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Collector current I
C
(W)
1.0
Collector current I
C
(A)
1.6
Ta=75˚C
1.2
25˚C
–25˚C
0.8
0.6
0.4
1.0mA
0.8
0.4
0.2
0.2
0.5mA
0.4
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
I
C
/I
B
=50
600
h
FE
— I
C
600
V
CE
=1V
f
T
— I
E
V
CB
=6V
f=200MHz
Ta=25˚C
Forward current transfer ratio h
FE
500
Ta=75˚C
400
25˚C
300
Transition frequency f
T
(MHz)
0.3
1
3
10
500
400
Ta=75˚C
25˚C
–25˚C
–25˚C
300
200
200
100
100
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
120
Collector output capacitance C
ob
(pF)
100
I
E
=0
f=200MHz
Ta=25˚C
80
60
40
20
0
1
3
10
30
100
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
